IRF6618TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

30A Ta 170A Tc

Number of Elements :

1

Turn-Off Delay Time :

27 ns

Published :

2007

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Length :

6.35mm

Power Dissipation-Max :

2.8W Ta 89W Tc

Height :

506μm

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 30A, 10V

Drain to Source Resistance :

3.4mOhm

Supplier Device Package :

DIRECTFET™ MT

Voltage - Rated DC :

30V

Number of Pins :

5

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Lead Free :

Lead Free

Turn On Delay Time :

21 ns

Operating Temperature :

-40°C~150°C TJ

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Rds On Max :

2.2 MΩ

Input Capacitance :

5.64nF

Current Rating :

30A

RoHS Status :

RoHS Compliant

Rise Time :

71ns

Continuous Drain Current (ID) :

23A

Vgs (Max) :

±20V

Width :

5.05mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Resistance :

2.2MOhm

Fall Time (Typ) :

8.1 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

89W

Min Operating Temperature :

-40°C

Radiation Hardening :

No

FET Type :

N-Channel

Nominal Vgs :

1.64 V

Drain to Source Voltage (Vdss) :

30V

Package / Case :

DirectFET™ Isometric MT

REACH SVHC :

No SVHC