IRF6618TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

2.8W Ta 89W Tc

Mount :

Surface Mount

Fall Time (Typ) :

8.1 ns

Current Rating :

150A

Drain to Source Breakdown Voltage :

30V

Min Operating Temperature :

-40°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Resistance :

2.2MOhm

Mounting Type :

Surface Mount

Rds On Max :

2.2 MΩ

Input Capacitance :

5.64nF

Number of Pins :

7

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Nominal Vgs :

1.64 V

RoHS Status :

Non-RoHS Compliant

Supplier Device Package :

DIRECTFET™ MT

Published :

2005

Continuous Drain Current (ID) :

170A

Package / Case :

DirectFET™ Isometric MT

Vgs (Max) :

±20V

Lead Free :

Lead Free

Power Dissipation :

2.8W

Dual Supply Voltage :

30V

Rise Time :

71ns

Turn-Off Delay Time :

27 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Voltage - Rated DC :

30V

Drain to Source Voltage (Vdss) :

30V

Width :

5.05mm

FET Type :

N-Channel

Reverse Recovery Time :

43 ns

Operating Temperature :

-40°C~150°C TJ

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

2.2mOhm @ 30A, 10V

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

30A Ta 170A Tc

Threshold Voltage :

1.64V

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V