IRF6618

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

2.8W Ta 89W Tc

Published :

2005

Pulsed Drain Current-Max (IDM) :

240A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

NO LEAD

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Packaging :

Cut Tape (CT)

HTS Code :

8541.29.00.75

Drain-source On Resistance-Max :

0.0022Ohm

Series :

HEXFET®

Package / Case :

DirectFET™ Isometric MT

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

30A Ta 170A Tc

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 30A, 10V

Number of Terminations :

3

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

2.35V @ 250μA

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

30A

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5640pF @ 15V

Avalanche Energy Rating (Eas) :

210 mJ

Number of Elements :

1

JESD-30 Code :

R-XBCC-N3