IRF6617TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

10.3mOhm

Vgs (Max) :

±20V

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Current Rating :

42A

Turn On Delay Time :

11 ns

Nominal Vgs :

2.35 V

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

34ns

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Package / Case :

DirectFET™ Isometric ST

Continuous Drain Current (ID) :

11A

Series :

HEXFET®

Radiation Hardening :

No

Mount :

Surface Mount

Height :

506μm

Min Operating Temperature :

-40°C

Length :

4.826mm

Power Dissipation-Max :

2.1W Ta 42W Tc

Power Dissipation :

42W

REACH SVHC :

No SVHC

Published :

2006

Supplier Device Package :

DIRECTFET™ ST

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

FET Type :

N-Channel

Turn-Off Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

5

Operating Temperature :

-40°C~150°C TJ

Input Capacitance :

1.3nF

Width :

3.95mm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Voltage - Rated DC :

30V

Fall Time (Typ) :

3.7 ns

Rds On Max :

8.1 mΩ

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

14A Ta 55A Tc

Drain to Source Breakdown Voltage :

30V

Resistance :

8.1mOhm

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

8.1mOhm @ 15A, 10V