IRF6614TRPBF

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Mfr.Part #
IRF6614TRPBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric ST
Datasheet
Download
Description
IRF6614 - 12V-300V N-CHANNEL POW
Stock
5,090
In Stock :
5,090

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Number of Terminations :
3
Vgs (Max) :
±20V
Series :
HEXFET®
Operating Temperature :
-40°C~150°C TJ
Rise Time :
27ns
JESD-30 Code :
R-XBCC-N3
Rds On (Max) @ Id, Vgs :
8.3m Ω @ 12.7A, 10V
Resistance :
8.3mOhm
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mounting Type :
Surface Mount
Height :
506μm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
42W
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Length :
4.826mm
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
40V
FET Type :
N-Channel
Fall Time (Typ) :
3.6 ns
Turn-Off Delay Time :
18 ns
Threshold Voltage :
1.8V
Current Rating :
12.7A
Turn On Delay Time :
13 ns
Power Dissipation-Max :
2.1W Ta 42W Tc
Package / Case :
DirectFET™ Isometric ST
Input Capacitance (Ciss) (Max) @ Vds :
2560pF @ 20V
Case Connection :
DRAIN
Factory Lead Time :
12 Weeks
Published :
2006
JESD-609 Code :
e1
Avalanche Energy Rating (Eas) :
22 mJ
Transistor Application :
SWITCHING
Number of Pins :
5
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Current - Continuous Drain (Id) @ 25°C :
12.7A Ta 55A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Vgs(th) (Max) @ Id :
2.25V @ 250μA
REACH SVHC :
No SVHC
RoHS Status :
ROHS3 Compliant
Width :
3.95mm
Continuous Drain Current (ID) :
10.1A
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 4.5V
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Terminal Position :
BOTTOM
Voltage - Rated DC :
40V
Packaging :
Tape and Reel (TR)
Datasheets
IRF6614TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6614TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:DirectFET™ Isometric ST, Number of Pins:5, IRF6614TRPBF pinout, IRF6614TRPBF datasheet PDF, IRF6614TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6614TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6614TRPBF


N-Channel Tape & Reel (TR) 8.3m Ω @ 12.7A, 10V ±20V 2560pF @ 20V 29nC @ 4.5V DirectFET™ Isometric ST

IRF6614TRPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 22 mJ.A device's maximum input capacitance is 2560pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.8V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

IRF6614TRPBF Features


the avalanche energy rating (Eas) is 22 mJ
a continuous drain current (ID) of 10.1A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 18 ns
a threshold voltage of 1.8V


IRF6614TRPBF Applications


There are a lot of Infineon Technologies
IRF6614TRPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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