IRF6614TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

23 ns

Input Capacitance (Ciss) (Max) @ Vds :

2560pF @ 20V

Height :

508μm

RoHS Status :

RoHS Compliant

Rise Time :

27ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

DirectFET™ Isometric ST

Max Operating Temperature :

150°C

Input Capacitance :

2.56nF

Published :

2006

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Mount :

Surface Mount

Power Dissipation-Max :

2.1W Ta 42W Tc

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

40V

Number of Pins :

5

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Turn On Delay Time :

13 ns

Supplier Device Package :

DIRECTFET™ ST

Radiation Hardening :

No

Vgs (Max) :

±20V

Threshold Voltage :

1.8V

Drain to Source Resistance :

9.9mOhm

Series :

HEXFET®

Dual Supply Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-40°C

Rds On (Max) @ Id, Vgs :

8.3mOhm @ 12.7A, 10V

Number of Elements :

1

Mounting Type :

Surface Mount

Turn-Off Delay Time :

18 ns

Fall Time (Typ) :

3.6 ns

Width :

3.95mm

Current - Continuous Drain (Id) @ 25°C :

12.7A Ta 55A Tc

Length :

4.826mm

Continuous Drain Current (ID) :

10.1A

REACH SVHC :

No SVHC

Nominal Vgs :

1.8 V

Rds On Max :

8.3 mΩ

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.1W

Drain to Source Breakdown Voltage :

40V

Termination :

SMD/SMT