IRF6614TR1
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- Mfr.Part #
- IRF6614TR1
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric ST
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 12.7A DIRECTFET
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Resistance :
- 5.9mOhm
- Published :
- 2006
- Power Dissipation :
- 2.1W
- Continuous Drain Current (ID) :
- 10.1A
- Width :
- 3.95mm
- Number of Pins :
- 7
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 40V
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Package / Case :
- DirectFET™ Isometric ST
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 12.7A Ta 55A Tc
- Reverse Recovery Time :
- 15 ns
- RoHS Status :
- Non-RoHS Compliant
- Rds On Max :
- 8.3 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 18 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2560pF @ 20V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- FET Type :
- N-Channel
- Input Capacitance :
- 2.56nF
- Supplier Device Package :
- DIRECTFET™ ST
- Series :
- HEXFET®
- Mount :
- Surface Mount
- Nominal Vgs :
- 1.8 V
- Min Operating Temperature :
- -40°C
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- Operating Temperature :
- -40°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 8.3mOhm @ 12.7A, 10V
- Power Dissipation-Max :
- 2.1W Ta 42W Tc
- Threshold Voltage :
- 1.8V
- Drain to Source Breakdown Voltage :
- 40V
- Resistance :
- 8.3mOhm
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- IRF6614TR1
N-Channel Tape & Reel (TR) 8.3mOhm @ 12.7A, 10V ±20V 2560pF @ 20V 29nC @ 4.5V 40V DirectFET™ Isometric ST
IRF6614TR1 Overview
A device's maximum input capacitance is 2560pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 5.9mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1.8V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF6614TR1 Features
a continuous drain current (ID) of 10.1A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 18 ns
single MOSFETs transistor is 5.9mOhm
a threshold voltage of 1.8V
a 40V drain to source voltage (Vdss)
IRF6614TR1 Applications
There are a lot of Infineon Technologies
IRF6614TR1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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