IRF6612TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

24A Ta 136A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

24A

Pulsed Drain Current-Max (IDM) :

190A

Number of Pins :

5

Drain to Source Breakdown Voltage :

30V

Peak Reflow Temperature (Cel) :

260

Rise Time :

52ns

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

89W

Nominal Vgs :

1.8 V

Terminal Form :

NO LEAD

Transistor Application :

SWITCHING

Height :

506μm

Input Capacitance (Ciss) (Max) @ Vds :

3970pF @ 15V

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Fall Time (Typ) :

4.8 ns

Avalanche Energy Rating (Eas) :

37 mJ

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

RoHS Status :

RoHS Compliant

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Power Dissipation-Max :

2.8W Ta 89W Tc

Mount :

Surface Mount

Terminal Position :

BOTTOM

Series :

HEXFET®

Turn-Off Delay Time :

21 ns

Continuous Drain Current (ID) :

136mA

Turn On Delay Time :

15 ns

Vgs (Max) :

±20V

Length :

6.35mm

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Voltage - Rated DC :

30V

REACH SVHC :

No SVHC

Drain-source On Resistance-Max :

0.0033Ohm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 24A, 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-XBCC-N3

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

DirectFET™ Isometric MX

Width :

5.05mm