IRF6612TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max :

2.8W Ta 89W Tc

Input Capacitance :

3.97nF

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Nominal Vgs :

1.8 V

Current Rating :

24A

Resistance :

3.3MOhm

Current - Continuous Drain (Id) @ 25°C :

24A Ta 136A Tc

Power Dissipation :

89W

Turn On Delay Time :

15 ns

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Height :

506μm

Vgs (Max) :

±20V

Drain to Source Resistance :

4.4mOhm

Rds On Max :

3.3 mΩ

Length :

6.35mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Rise Time :

52ns

Drain to Source Voltage (Vdss) :

30V

Max Operating Temperature :

150°C

Package / Case :

DirectFET™ Isometric MX

Voltage - Rated DC :

30V

Min Operating Temperature :

-40°C

Continuous Drain Current (ID) :

19A

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

4.8 ns

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

3970pF @ 15V

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 24A, 10V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

21 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

REACH SVHC :

No SVHC

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Supplier Device Package :

DIRECTFET™ MX

Number of Elements :

1

Number of Pins :

5

Width :

5.05mm