IRF6612TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Package / Case :

DirectFET™ Isometric MX

Drain to Source Resistance :

2.5Ohm

Power Dissipation-Max :

2.8W Ta 89W Tc

Reverse Recovery Time :

19 ns

Number of Pins :

7

Threshold Voltage :

2.25V

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 24A, 10V

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

3.3 mΩ

Lead Free :

Lead Free

Current Rating :

24A

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

24A Ta 136A Tc

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2005

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

24A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

21 ns

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

3970pF @ 15V

Dual Supply Voltage :

30V

REACH SVHC :

No SVHC

Nominal Vgs :

2.25 V

Power Dissipation :

2.8W

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Voltage - Rated DC :

30V

Min Operating Temperature :

-40°C

Supplier Device Package :

DIRECTFET™ MX

Mount :

Surface Mount

Input Capacitance :

3.97nF

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Rise Time :

52ns