IRF6611TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

22A

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

DRAIN

Number of Terminations :

3

Current Rating :

32A

FET Type :

N-Channel

Mounting Type :

Surface Mount

Width :

5.05mm

Fall Time (Typ) :

6.5 ns

Radiation Hardening :

No

Power Dissipation :

89W

Number of Pins :

5

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Turn-Off Delay Time :

24 ns

Package / Case :

DirectFET™ Isometric MX

Current - Continuous Drain (Id) @ 25°C :

32A Ta 150A Tc

JESD-30 Code :

R-XBCC-N3

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.0026Ohm

Terminal Position :

BOTTOM

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Rise Time :

57ns

Turn On Delay Time :

18 ns

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 27A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

220A

Voltage - Rated DC :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4860pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

310 mJ

Mount :

Surface Mount

Number of Elements :

1

Series :

HEXFET®

Length :

6.35mm

Power Dissipation-Max :

3.9W Ta 89W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

506μm

Published :

2006