IRF6611TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

4.86nF

Power Dissipation :

89W

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

4860pF @ 15V

Supplier Device Package :

DIRECTFET™ MX

Min Operating Temperature :

-40°C

Nominal Vgs :

2.25 V

Number of Elements :

1

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

32A Ta 150A Tc

Rds On (Max) @ Id, Vgs :

2.6mOhm @ 27A, 10V

Power Dissipation-Max :

3.9W Ta 89W Tc

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Vgs (Max) :

±20V

Current Rating :

32A

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

24 ns

Voltage - Rated DC :

30V

Width :

5.05mm

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Number of Pins :

5

Published :

2006

Package / Case :

DirectFET™ Isometric MX

Series :

HEXFET®

Radiation Hardening :

No

Operating Temperature :

-40°C~150°C TJ

Rds On Max :

2.6 mΩ

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

6.5 ns

Continuous Drain Current (ID) :

22A

Drain to Source Resistance :

3.4mOhm

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn On Delay Time :

18 ns

Height :

506μm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Rise Time :

57ns

RoHS Status :

RoHS Compliant

Length :

6.35mm

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V