IRF6611TR1
- Mfr.Part #
- IRF6611TR1
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MX
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 32A DIRECTFET
- Stock
- 5,255
- In Stock :
- 5,255
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current Rating :
- 27A
- Lead Free :
- Lead Free
- Number of Pins :
- 5
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- RoHS Status :
- Non-RoHS Compliant
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Reverse Recovery Time :
- 24 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 4.86nF
- Operating Temperature :
- -40°C~150°C TJ
- Continuous Drain Current (ID) :
- 22A
- Rds On Max :
- 2.6 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 4.5V
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Nominal Vgs :
- 2.25 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4860pF @ 15V
- Dual Supply Voltage :
- 30V
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 2.6mOhm @ 27A, 10V
- Power Dissipation :
- 3.9W
- Power Dissipation-Max :
- 3.9W Ta 89W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 6.5 ns
- Rise Time :
- 57ns
- Min Operating Temperature :
- -40°C
- Published :
- 2005
- Current - Continuous Drain (Id) @ 25°C :
- 32A Ta 150A Tc
- Package / Case :
- DirectFET™ Isometric MX
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- Series :
- HEXFET®
- Drain to Source Resistance :
- 2MOhm
- Threshold Voltage :
- 2.25V
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 30V
- Supplier Device Package :
- DIRECTFET™ MX
- Turn-Off Delay Time :
- 24 ns
- Datasheets
- IRF6611TR1

N-Channel Tape & Reel (TR) 2.6mOhm @ 27A, 10V ±20V 4860pF @ 15V 56nC @ 4.5V 30V DirectFET™ Isometric MX
IRF6611TR1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4860pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 22A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.This device has a drain-to-source resistance of 2mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2.25V, which means that it will not activate any of its functions when its threshold voltage reaches 2.25V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6611TR1 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 2mOhm
a threshold voltage of 2.25V
a 30V drain to source voltage (Vdss)
IRF6611TR1 Applications
There are a lot of Infineon Technologies
IRF6611TR1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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