IRF6611

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4860pF @ 15V

Surface Mount :

yes

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Drain-source On Resistance-Max :

0.0026Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

220A

JESD-30 Code :

R-XBCC-N3

Transistor Element Material :

SILICON

FET Type :

N-Channel

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

32A

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

32A Ta 150A Tc

Mounting Type :

Surface Mount

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

310 mJ

Terminal Form :

NO LEAD

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 27A, 10V

Published :

2005

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.9W Ta 89W Tc

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Operating Temperature :

-40°C~150°C TJ

Case Connection :

DRAIN

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Package / Case :

DirectFET™ Isometric MX