IRF6610TR1PBF

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Mfr.Part #
IRF6610TR1PBF
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric SQ
Datasheet
Download
Description
MOSFET N-CH 20V 15A DIRECTFET
Stock
2,022
In Stock :
2,022

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
2.2W Ta 42W Tc
Power Dissipation :
42W
Voltage - Rated DC :
20V
Threshold Voltage :
2.1V
Number of Pins :
5
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Breakdown Voltage :
20V
RoHS Status :
RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
1520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 4.5V
Package / Case :
DirectFET™ Isometric SQ
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
6.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id :
2.55V @ 250µA
Series :
HEXFET®
Nominal Vgs :
2.1 V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Current Rating :
15A
REACH SVHC :
No SVHC
Mount :
Surface Mount
Vgs (Max) :
±20V
Published :
2006
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
15A Ta 66A Tc
Lead Free :
Lead Free
Continuous Drain Current (ID) :
12A
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Operating Temperature :
-40°C~150°C TJ
Datasheets
IRF6610TR1PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6610TR1PBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:5, Mounting Type:Surface Mount, Package / Case:DirectFET™ Isometric SQ, Operating Temperature:-40°C~150°C TJ, IRF6610TR1PBF pinout, IRF6610TR1PBF datasheet PDF, IRF6610TR1PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF6610TR1PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF6610TR1PBF


N-Channel Tape & Reel (TR) 6.8m Ω @ 15A, 10V ±20V 1520pF @ 10V 17nC @ 4.5V DirectFET™ Isometric SQ

IRF6610TR1PBF Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1520pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.1V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRF6610TR1PBF Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 20V voltage
a threshold voltage of 2.1V


IRF6610TR1PBF Applications


There are a lot of Infineon Technologies
IRF6610TR1PBF applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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