IRF6610TR1PBF
- Mfr.Part #
- IRF6610TR1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric SQ
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 15A DIRECTFET
- Stock
- 2,022
- In Stock :
- 2,022
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 2.2W Ta 42W Tc
- Power Dissipation :
- 42W
- Voltage - Rated DC :
- 20V
- Threshold Voltage :
- 2.1V
- Number of Pins :
- 5
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 20V
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1520pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Package / Case :
- DirectFET™ Isometric SQ
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id :
- 2.55V @ 250µA
- Series :
- HEXFET®
- Nominal Vgs :
- 2.1 V
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Current Rating :
- 15A
- REACH SVHC :
- No SVHC
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Published :
- 2006
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 15A Ta 66A Tc
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 12A
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- IRF6610TR1PBF

N-Channel Tape & Reel (TR) 6.8m Ω @ 15A, 10V ±20V 1520pF @ 10V 17nC @ 4.5V DirectFET™ Isometric SQ
IRF6610TR1PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1520pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.1V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IRF6610TR1PBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 20V voltage
a threshold voltage of 2.1V
IRF6610TR1PBF Applications
There are a lot of Infineon Technologies
IRF6610TR1PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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