IRF6609TRPBF
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- Mfr.Part #
- IRF6609TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MT
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 31A DIRECTFET
- Stock
- 37,348
- In Stock ：
- 37,348
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 31A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- LOW CONDUCTION LOSS
- Current - Continuous Drain (Id) @ 25°C :
- 31A Ta 150A Tc
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 20V
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Height :
- 506μm
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 4.5V
- Power Dissipation-Max :
- 1.8W Ta 89W Tc
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 150mA
- Drain to Source Breakdown Voltage :
- 20V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.002Ohm
- Width :
- 5.05mm
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 6290pF @ 10V
- Published :
- 2006
- Number of Pins :
- 5
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 9.8 ns
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Power Dissipation :
- 89W
- Number of Terminations :
- 3
- Rise Time :
- 95ns
- Length :
- 6.35mm
- JESD-30 Code :
- R-XBCC-N3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 31A
- ECCN Code :
- EAR99
- Operating Temperature :
- -40°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 2.45V @ 250μA
- Turn-Off Delay Time :
- 26 ns
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Turn On Delay Time :
- 24 ns
- Package / Case :
- DirectFET™ Isometric MT
- Series :
- HEXFET®
- Datasheets
- IRF6609TRPBF
N-Channel Tape & Reel (TR) 2m Ω @ 31A, 10V ±20V 6290pF @ 10V 69nC @ 4.5V DirectFET™ Isometric MT
IRF6609TRPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.The maximum input capacitance of this device is 6290pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 150mA.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 24 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IRF6609TRPBF Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26 ns
IRF6609TRPBF Applications
There are a lot of Infineon Technologies
IRF6609TRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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