IRF6609TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

20V

Rds On (Max) @ Id, Vgs :

2mOhm @ 31A, 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Turn On Delay Time :

24 ns

Number of Pins :

5

Height :

506μm

Input Capacitance :

6.29nF

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 4.5V

Mount :

Surface Mount

Resistance :

2MOhm

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

31A Ta 150A Tc

Fall Time (Typ) :

9.8 ns

Threshold Voltage :

1.55V

Mounting Type :

Surface Mount

Rds On Max :

2 mΩ

Published :

2005

Package / Case :

DirectFET™ Isometric MT

Dual Supply Voltage :

20V

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

25A

Width :

5.05mm

Number of Elements :

1

Min Operating Temperature :

-40°C

Nominal Vgs :

2.45 V

Termination :

SMD/SMT

Drain to Source Resistance :

2.6MOhm

Drain to Source Voltage (Vdss) :

20V

Voltage - Rated DC :

20V

Series :

HEXFET®

Supplier Device Package :

DIRECTFET™ MT

Power Dissipation-Max :

1.8W Ta 89W Tc

Length :

6.35mm

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

95ns

Power Dissipation :

1.8W

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

26 ns

Current Rating :

31A