IRF6609TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Rds On Max :

2 mΩ

Threshold Voltage :

2.45V

Resistance :

2MOhm

Rise Time :

95ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

6.29nF

Supplier Device Package :

DIRECTFET™ MT

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 4.5V

Package / Case :

DirectFET™ Isometric MT

Drain to Source Voltage (Vdss) :

20V

Series :

HEXFET®

REACH SVHC :

No SVHC

RoHS Status :

Non-RoHS Compliant

Published :

2005

Rds On (Max) @ Id, Vgs :

2mOhm @ 31A, 10V

Drain to Source Breakdown Voltage :

20V

Nominal Vgs :

2.45 V

Current - Continuous Drain (Id) @ 25°C :

31A Ta 150A Tc

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

7

Width :

5.05mm

Power Dissipation-Max :

1.8W Ta 89W Tc

Power Dissipation :

2.8W

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Fall Time (Typ) :

9.8 ns

Reverse Recovery Time :

32 ns

Continuous Drain Current (ID) :

150A

Dual Supply Voltage :

20V

Current Rating :

31A

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 10V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

26 ns

Forward Voltage :

800mV

Drain to Source Resistance :

1.6Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Min Operating Temperature :

-40°C

Voltage - Rated DC :

20V

Max Operating Temperature :

150°C