IRF6609

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

7

Current Rating :

31A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Rise Time :

95ns

Current - Continuous Drain (Id) @ 25°C :

31A Ta 150A Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Fall Time (Typ) :

9.8 ns

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.002Ohm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.8W Ta 89W Tc

Avalanche Energy Rating (Eas) :

240 mJ

Pulsed Drain Current-Max (IDM) :

250A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 10V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Series :

HEXFET®

Number of Terminations :

3

Terminal Position :

BOTTOM

Additional Feature :

LOW CONDUCTION LOSS

Terminal Form :

NO LEAD

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Published :

2005

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Number of Elements :

1

Transistor Element Material :

SILICON

Voltage - Rated DC :

20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

JESD-30 Code :

R-XBCC-N3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

89W

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

150A

Turn-Off Delay Time :

26 ns

Rds On (Max) @ Id, Vgs :

2m Ω @ 31A, 10V

RoHS Status :

Non-RoHS Compliant

Package / Case :

DirectFET™ Isometric MT

Case Connection :

DRAIN