IRF6607TR1
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- Mfr.Part #
- IRF6607TR1
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MT
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 27A DIRECTFET
- Stock
- 34,761
- In Stock ：
- 34,761
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Max Operating Temperature :
- 150°C
- Package / Case :
- DirectFET™ Isometric MT
- Operating Temperature :
- -40°C~150°C TJ
- Vgs (Max) :
- ±12V
- Number of Pins :
- 7
- Drain to Source Breakdown Voltage :
- 30V
- Lead Free :
- Contains Lead
- Rds On Max :
- 3.3 mΩ
- Power Dissipation-Max :
- 3.6W Ta 42W Tc
- Rds On (Max) @ Id, Vgs :
- 3.3mOhm @ 25A, 10V
- Threshold Voltage :
- 2V
- Drain to Source Resistance :
- 3.3MOhm
- Current - Continuous Drain (Id) @ 25°C :
- 27A Ta 94A Tc
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 13 ns
- Mount :
- Surface Mount
- Rise Time :
- 8ns
- Supplier Device Package :
- DIRECTFET™ MT
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- HEXFET®
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 7V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 4.5V
- Published :
- 2005
- Power Dissipation :
- 3.6W
- Contact Plating :
- Silver
- Turn-Off Delay Time :
- 32 ns
- Input Capacitance :
- 6.93nF
- Turn On Delay Time :
- 60 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6930pF @ 15V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- FET Type :
- N-Channel
- Min Operating Temperature :
- -40°C
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 27A
- Datasheets
- IRF6607TR1
N-Channel Tape & Reel (TR) 3.3mOhm @ 25A, 10V ±12V 6930pF @ 15V 75nC @ 4.5V 30V DirectFET™ Isometric MT
IRF6607TR1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6930pF @ 15V.This device conducts a continuous drain current (ID) of 27A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 32 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 3.3mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 60 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 7V volts (4.5V 7V).
IRF6607TR1 Features
a continuous drain current (ID) of 27A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
single MOSFETs transistor is 3.3mOhm
a threshold voltage of 2V
a 30V drain to source voltage (Vdss)
IRF6607TR1 Applications
There are a lot of Infineon Technologies
IRF6607TR1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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