IRF6607
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- Mfr.Part #
- IRF6607
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MT
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 27A DIRECTFET
- Stock
- 24,948
- In Stock ：
- 24,948
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±12V
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 4.5V
- FET Type :
- N-Channel
- Published :
- 2005
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 25A, 10V
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 27A Ta 94A Tc
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Package / Case :
- DirectFET™ Isometric MT
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Power Dissipation-Max :
- 3.6W Ta 42W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 7V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6930pF @ 15V
- Mounting Type :
- Surface Mount
- Datasheets
- IRF6607
N-Channel Tape & Reel (TR) 3.3m Ω @ 25A, 10V ±12V 6930pF @ 15V 75nC @ 4.5V 30V DirectFET™ Isometric MT
IRF6607 Description
The IRF6607 is an application Specific MOSFET combining the most recent HEXFET? Power MOSFET Silicon technology with sophisticated DirectFETTM packaging to produce the lowest on-state resistance in a SO-8 footprint and 0.7 mm profile. The DirectFET package is backwards compatible with existing power application layout geometries, PCB assembly equipment, and vapour phase, infrared, or convection soldering processes.
IRF6607 Features
-
Low Conduction Losses
-
High Cdv/dt Immunity
-
Low Profile (<0.7 mm)
-
Dual-Sided Cooling Compatible
-
Compatible with existing Surface Mount Techniques
IRF6607 Applications
-
CPU Core DC-DC Converters
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