IRF6604TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

11.5mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Radiation Hardening :

No

Threshold Voltage :

2.1V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Nominal Vgs :

2.1 V

Gate to Source Voltage (Vgs) :

12V

Lead Free :

Lead Free

Input Capacitance :

2.27nF

Mount :

Surface Mount

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2270pF @ 15V

Supplier Device Package :

DIRECTFET™ MQ

Number of Elements :

1

Rds On Max :

11.5 mΩ

Width :

5.05mm

Turn-Off Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current - Continuous Drain (Id) @ 25°C :

12A Ta 49A Tc

Series :

HEXFET®

Drain to Source Resistance :

11.5Ohm

Reverse Recovery Time :

31 ns

Number of Pins :

7

RoHS Status :

RoHS Compliant

Dual Supply Voltage :

30V

Continuous Drain Current (ID) :

12A

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Max Operating Temperature :

150°C

Power Dissipation-Max :

2.3W Ta 42W Tc

Vgs (Max) :

±12V

Published :

2005

Operating Temperature :

-40°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

Drain to Source Voltage (Vdss) :

30V

Min Operating Temperature :

-40°C

Package / Case :

DirectFET™ Isometric MQ

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

11.5mOhm @ 12A, 7V

Power Dissipation :

2.3W

Packaging :

Tape and Reel (TR)