IRF6603
- Mfr.Part #
- IRF6603
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric MT
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 27A DIRECTFET
- Stock
- 6,974
- In Stock :
- 6,974
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- DirectFET™ Isometric MT
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 3.6W Ta 42W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 6590pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 27A Ta 92A Tc
- Published :
- 2005
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 25A, 10V
- Vgs (Max) :
- +20V, -12V
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- IRF6603

N-Channel Tape & Reel (TR) 3.4m Ω @ 25A, 10V +20V, -12V 6590pF @ 15V 72nC @ 4.5V 30V DirectFET™ Isometric MT
IRF6603 Description
The IRF6603 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET? packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only a 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, and infra-red or convection soldering techniques. The DirectFET package allows dual-sided cooling to maximize thermal transfer in power systems, IMPROVING the previous best thermal resistance by 80%.
IRF6603 Features
-
Application-Specific MOSFETs
-
Ideal for CPU Core DC-DC Converters
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Low Conduction Losses
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High Cdv/dt Immunity
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Low Profile (<0.7 mm)
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Dual-Sided Cooling Compatible
-
Compatible with existing Surface Mount Techniques
IRF6603 Applications
-
High-efficiency DC-DC converters
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