IRF647

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

550 mJ

Terminal Form :

THROUGH-HOLE

Supplier Device Package :

D2PAK (TO-263)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Drain to Source Voltage (Vdss) :

275 V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Package :

Bulk

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

59 nC @ 10 V

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.34 Ω

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Shape :

RECTANGULAR

Number of Elements :

1

Series :

-

Polarity/Channel Type :

N-Channel

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL

Power Dissipation (Max) :

125W (Tc)

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

Rochester Electronics LLC

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

FET Feature :

-

Rds On (Max) @ Id, Vgs :

340mOhm @ 8A, 10V

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

13A (Tc)

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

52 A

Terminal Position :

Single

DS Breakdown Voltage-Min :

275 V