IRF645

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

59 nC @ 10 V

Product Status :

Active

Package :

Bulk

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

D2PAK (TO-263)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

250 V

Power Dissipation (Max) :

125W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

340mOhm @ 8A, 10V

Current - Continuous Drain (Id) @ 25°C :

13A (Tc)

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

FET Feature :

-