IRF644STRRPBF
- Mfr.Part #
- IRF644STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 14A D2PAK
- Stock
- 30,246
- In Stock :
- 30,246
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 14A
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Power Dissipation :
- 3.1W
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 49 ns
- Turn-Off Delay Time :
- 53 ns
- Weight :
- 1.437803g
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 8.4A, 10V
- Factory Lead Time :
- 8 Weeks
- FET Type :
- N-Channel
- Rds On Max :
- 280 mΩ
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 280mOhm
- Turn On Delay Time :
- 11 ns
- Number of Pins :
- 3
- Rise Time :
- 24ns
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.67mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- D2PAK
- Published :
- 2013
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±20V
- Height :
- 4.83mm
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Width :
- 9.65mm
- Input Capacitance :
- 1.3nF
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 250V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Number of Channels :
- 1
- Datasheets
- IRF644STRRPBF
N-Channel Tape & Reel (TR) 280mOhm @ 8.4A, 10V ±20V 1300pF @ 25V 68nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF644STRRPBF Overview
A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 53 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 280mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF644STRRPBF Features
a continuous drain current (ID) of 14A
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a 250V drain to source voltage (Vdss)
IRF644STRRPBF Applications
There are a lot of Vishay Siliconix
IRF644STRRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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