IRF644STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

49 ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

3.1W

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Rise Time :

24ns

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55°C

Drain to Source Resistance :

280mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2016

Rds On Max :

280 mΩ

Number of Pins :

3

Supplier Device Package :

D2PAK

Height :

4.83mm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance :

1.3nF

Length :

10.67mm

Drain to Source Voltage (Vdss) :

250V

Continuous Drain Current (ID) :

14A

Rds On (Max) @ Id, Vgs :

280mOhm @ 8.4A, 10V

FET Type :

N-Channel

Radiation Hardening :

No

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Width :

9.65mm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Weight :

1.437803g

Number of Elements :

1

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

3.1W Ta 125W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Turn-Off Delay Time :

53 ns

Vgs (Max) :

±20V

Turn On Delay Time :

11 ns

Max Operating Temperature :

150°C