IRF644SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

280m Ω @ 8.4A, 10V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.1W Ta 125W Tc

Number of Pins :

3

Element Configuration :

Single

Drain to Source Breakdown Voltage :

250V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Threshold Voltage :

4V

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

56A

Weight :

1.437803g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

14A

Transistor Element Material :

SILICON

Lead Free :

Lead Free

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs (Max) :

±20V

Turn-Off Delay Time :

53 ns

Nominal Vgs :

4 V

REACH SVHC :

Unknown

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

550 mJ

Length :

10.67mm

Width :

9.65mm

JESD-609 Code :

e3

Rise Time :

24ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83mm

Turn On Delay Time :

11 ns

Fall Time (Typ) :

49 ns

Power Dissipation :

3.1W

Factory Lead Time :

8 Weeks

Resistance :

280mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Number of Terminations :

2