IRF644S
- Mfr.Part #
- IRF644S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 14A D2PAK
- Stock
- 42,367
- In Stock :
- 42,367
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Voltage - Rated DC :
- 250V
- Current Rating :
- 14A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 25V
- Rise Time :
- 24ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 11 ns
- Min Operating Temperature :
- -55°C
- Weight :
- 1.437803g
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 250V
- Rds On (Max) @ Id, Vgs :
- 280mOhm @ 8.4A, 10V
- FET Type :
- N-Channel
- Rds On Max :
- 280 mΩ
- Turn-Off Delay Time :
- 53 ns
- Mount :
- Surface Mount
- Number of Channels :
- 1
- Power Dissipation-Max :
- 3.1W Ta 125W Tc
- Length :
- 10.67mm
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Continuous Drain Current (ID) :
- 14A
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- D2PAK
- Drain to Source Resistance :
- 280mOhm
- Height :
- 4.83mm
- Power Dissipation :
- 125W
- Input Capacitance :
- 1.3nF
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±20V
- Width :
- 9.65mm
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 49 ns
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Pins :
- 3
- Datasheets
- IRF644S
N-Channel Tube 280mOhm @ 8.4A, 10V ±20V 1300pF @ 25V 68nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF644S Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.This device has a drain-to-source resistance of 280mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF644S Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a 250V drain to source voltage (Vdss)
IRF644S Applications
There are a lot of Vishay Siliconix
IRF644S applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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