IRF644PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Voltage - Rated DC :

250V

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Published :

2008

Turn-Off Delay Time :

53 ns

Rds On Max :

280 mΩ

Input Capacitance :

1.3nF

Rise Time :

24ns

Continuous Drain Current (ID) :

14A

Mount :

Through Hole

Current Rating :

14A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Supplier Device Package :

TO-220AB

Power Dissipation :

125W

Threshold Voltage :

4V

Vgs (Max) :

±20V

Drain to Source Resistance :

280mOhm

Number of Elements :

1

Factory Lead Time :

8 Weeks

Weight :

6.000006g

Number of Channels :

1

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Power Dissipation-Max :

125W Tc

RoHS Status :

ROHS3 Compliant

Recovery Time :

500 ns

Drain to Source Voltage (Vdss) :

250V

Number of Pins :

3

Element Configuration :

Single

Resistance :

280mOhm

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

280mOhm @ 8.4A, 10V

Packaging :

Tube

Turn On Delay Time :

11 ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3

REACH SVHC :

Unknown

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

9.01mm

FET Type :

N-Channel

Contact Plating :

Tin

Length :

10.41mm

Fall Time (Typ) :

49 ns

Min Operating Temperature :

-55°C

Width :

4.7mm

Drain to Source Breakdown Voltage :

250V

Drive Voltage (Max Rds On,Min Rds On) :

10V