IRF644NS

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Mfr.Part #
IRF644NS
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 250V 14A D2PAK
Stock
74,106
In Stock :
74,106

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max :
150W Tc
Turn-Off Delay Time :
30 ns
RoHS Status :
Non-RoHS Compliant
Operating Temperature :
-55°C~175°C TJ
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Input Capacitance :
1.06nF
Voltage - Rated DC :
250V
Fall Time (Typ) :
17 ns
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Turn On Delay Time :
10 ns
Published :
2009
Drain to Source Voltage (Vdss) :
250V
Continuous Drain Current (ID) :
14A
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
Min Operating Temperature :
-55°C
Mounting Type :
Surface Mount
Current Rating :
14A
Mount :
Surface Mount
Height :
4.83mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Lead Free :
Contains Lead
Gate to Source Voltage (Vgs) :
20V
Rise Time :
21ns
Element Configuration :
Single
Number of Channels :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
175°C
Length :
10.67mm
Number of Pins :
3
Drain to Source Resistance :
240mOhm
Rds On Max :
240 mΩ
Rds On (Max) @ Id, Vgs :
240mOhm @ 8.4A, 10V
Weight :
1.437803g
Packaging :
Tube
Width :
9.65mm
Datasheets
IRF644NS
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF644NS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Channels:1, Number of Pins:3, IRF644NS pinout, IRF644NS datasheet PDF, IRF644NS amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF644NS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF644NS


N-Channel Tube 240mOhm @ 8.4A, 10V ±20V 1060pF @ 25V 54nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF644NS Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 240mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF644NS Features


a continuous drain current (ID) of 14A
the turn-off delay time is 30 ns
single MOSFETs transistor is 240mOhm
a 250V drain to source voltage (Vdss)


IRF644NS Applications


There are a lot of Vishay Siliconix
IRF644NS applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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