IRF644NLPBF

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Mfr.Part #
IRF644NLPBF
Manufacturer
Vishay
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 250V 14A I2PAK
Stock
25,939
In Stock :
25,939

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
I2PAK
Width :
4.83mm
Drain to Source Resistance :
240mOhm
Drain to Source Breakdown Voltage :
250V
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Element Configuration :
Single
Max Operating Temperature :
175°C
Published :
2009
Fall Time (Typ) :
17 ns
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~175°C TJ
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Mounting Type :
Through Hole
Turn-Off Delay Time :
30 ns
Rds On (Max) @ Id, Vgs :
240mOhm @ 8.4A, 10V
Length :
10.67mm
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Turn On Delay Time :
10 ns
Mount :
Through Hole
Rise Time :
21ns
Weight :
2.387001g
Drain to Source Voltage (Vdss) :
250V
Input Capacitance :
1.06nF
Packaging :
Tube
Rds On Max :
240 mΩ
Continuous Drain Current (ID) :
14A
Height :
9.65mm
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Min Operating Temperature :
-55°C
Power Dissipation-Max :
150W Tc
Datasheets
IRF644NLPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF644NLPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Number of Channels:1, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, IRF644NLPBF pinout, IRF644NLPBF datasheet PDF, IRF644NLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF644NLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF644NLPBF


N-Channel Tube 240mOhm @ 8.4A, 10V ±20V 1060pF @ 25V 54nC @ 10V 250V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF644NLPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 240mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF644NLPBF Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 240mOhm
a 250V drain to source voltage (Vdss)


IRF644NLPBF Applications


There are a lot of Vishay Siliconix
IRF644NLPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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