IRF644N

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Mfr.Part #
IRF644N
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 14A TO220AB
Stock
131
In Stock :
131

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Rise Time :
21ns
Weight :
6.000006g
Element Configuration :
Single
Length :
10.41mm
Fall Time (Typ) :
17 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Lead Free :
Contains Lead
Width :
4.7mm
Rds On Max :
240 mΩ
Voltage - Rated DC :
250V
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
Non-RoHS Compliant
Packaging :
Tube
Package / Case :
TO-220-3
Continuous Drain Current (ID) :
14A
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
250V
Min Operating Temperature :
-55°C
Turn On Delay Time :
10 ns
Drain to Source Resistance :
240mOhm
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Supplier Device Package :
TO-220AB
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Turn-Off Delay Time :
30 ns
Published :
2009
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1
Input Capacitance :
1.06nF
Number of Pins :
3
Mounting Type :
Through Hole
FET Type :
N-Channel
Power Dissipation :
150W
Mount :
Through Hole
Max Operating Temperature :
175°C
Drain to Source Voltage (Vdss) :
250V
Height :
9.01mm
Rds On (Max) @ Id, Vgs :
240mOhm @ 8.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
Power Dissipation-Max :
150W Tc
Current Rating :
14A
Datasheets
IRF644N
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF644N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Channels:1, Number of Pins:3, Mounting Type:Through Hole, IRF644N pinout, IRF644N datasheet PDF, IRF644N amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF644N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF644N


N-Channel Tube 240mOhm @ 8.4A, 10V ±20V 1060pF @ 25V 54nC @ 10V 250V TO-220-3

IRF644N Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1060pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=250V. And this device has 250V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 240mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF644N Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 240mOhm
a 250V drain to source voltage (Vdss)


IRF644N Applications


There are a lot of Vishay Siliconix
IRF644N applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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