IRF644B-FP001

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

250V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

FET Type :

N-Channel

Power Dissipation-Max :

139W Tc

Avalanche Energy Rating (Eas) :

480 mJ

Number of Elements :

1

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

250V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

56A

Number of Terminations :

3

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

Lifecycle Status :

LIFETIME (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Pbfree Code :

yes

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

280m Ω @ 7A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE