IRF644

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.000006g

Power Dissipation-Max :

125W Tc

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Turn On Delay Time :

11 ns

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

RoHS Status :

Non-RoHS Compliant

Width :

4.7mm

Drain to Source Voltage (Vdss) :

250V

Supplier Device Package :

TO-220AB

Published :

2011

Radiation Hardening :

No

FET Type :

N-Channel

Voltage - Rated DC :

250V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drain to Source Resistance :

280mOhm

Power Dissipation :

125W

Element Configuration :

Single

Current Rating :

14A

Drain to Source Breakdown Voltage :

250V

Continuous Drain Current (ID) :

14A

Fall Time (Typ) :

49 ns

Input Capacitance :

1.3nF

Rise Time :

24ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Max Operating Temperature :

150°C

Height :

9.01mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

280mOhm @ 8.4A, 10V

Min Operating Temperature :

-55°C

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Length :

10.41mm

Turn-Off Delay Time :

53 ns

Number of Pins :

3

Mounting Type :

Through Hole

Rds On Max :

280 mΩ

Vgs (Max) :

±20V

Lead Free :

Lead Free

Packaging :

Tube

Number of Elements :

1