IRF643

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

THROUGH-HOLE

Drain-source On Resistance-Max :

0.22 Ω

Avalanche Energy Rating (Eas) :

580 mJ

Qualification Status :

COMMERCIAL

Pbfree Code :

No

RoHS :

Non-Compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

64 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

16A (Tc)

Package :

Bulk

Terminal Finish :

TIN LEAD

Pulsed Drain Current-Max (IDM) :

64 A

Case Connection :

DRAIN

FET Feature :

-

Terminal Position :

Single

Mounting Type :

Through Hole

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

150 V

Number of Terminals :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Manufacturer :

Rochester Electronics LLC

Supplier Device Package :

TO-220AB

Surface Mount :

No

Series :

-

Input Capacitance (Ciss) (Max) @ Vds :

1275 pF @ 25 V

Power Dissipation (Max) :

125W (Tc)

Rds On (Max) @ Id, Vgs :

220mOhm @ 10A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

150 V

Transistor Element Material :

SILICON

FET Type :

N-Channel

JESD-30 Code :

R-PSFM-T3