IRF640STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

180mOhm

Width :

9.65mm

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation :

130W

Transistor Element Material :

SILICON

Contact Plating :

Tin

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

18A

Case Connection :

DRAIN

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Published :

2015

Mount :

Surface Mount, Through Hole

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

580 mJ

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Vgs (Max) :

±20V

Factory Lead Time :

8 Weeks

Length :

10.67mm

Power Dissipation-Max :

3.1W Ta 130W Tc

Drain to Source Breakdown Voltage :

200V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

72A

Height :

4.83mm

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Weight :

1.437803g

Turn On Delay Time :

14 ns

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Number of Elements :

1

Number of Pins :

3

Turn-Off Delay Time :

45 ns

Fall Time (Typ) :

36 ns

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

51ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V