IRF640PBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Rad Hardened :

No

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Continuous Drain Current :

18(A)

Base Product Number :

IRF640

Drain-Source On-Volt :

200(V)

Package Type :

TO-220AB

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Product Status :

Active

Power Dissipation :

125(W)

Power Dissipation (Max) :

125W (Tc)

Packaging :

Tube

Configuration :

Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Manufacturer :

Vishay

Series :

-

Package :

Tube

Vgs (Max) :

±20V

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-220-3

Mounting :

Through Hole

Channel Mode :

Enhancement

Rise Time :

45 ns

Type :

Power MOSFET

Brand :

Vishay / Siliconix

FET Feature :

-

Pin Count :

3 +Tab

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Operating Temperature Classification :

Military

Drain to Source Voltage (Vdss) :

200 V

Polarity :

N

Supplier Device Package :

TO-220AB

Operating Temp Range :

-55C to 150C

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

180mOhm @ 11A, 10V

Number of Channels :

1 Channel

RoHS :

Details

Gate-Source Voltage (Max) :

±20(V)

Product Category :

MOSFET

Number of Elements :

1

Product Type :

MOSFET