IRF640NSTRLPBF
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- Mfr.Part #
- IRF640NSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A D2PAK
- Stock
- 416,186
- In Stock ：
- 416,186
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 72A
- Published :
- 2004
- Current Rating :
- 18A
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Case Connection :
- DRAIN
- Power Dissipation :
- 150W
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 200V
- Number of Elements :
- 1
- Resistance :
- 150mOhm
- Nominal Vgs :
- 4 V
- Turn On Delay Time :
- 10 ns
- ECCN Code :
- EAR99
- Threshold Voltage :
- 4V
- Lead Free :
- Contains Lead, Lead Free
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Termination :
- SMD/SMT
- Max Junction Temperature (Tj) :
- 175°C
- Terminal Form :
- Gull wing
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.668mm
- Voltage - Rated DC :
- 200V
- Continuous Drain Current (ID) :
- 18A
- Rise Time :
- 19ns
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1160pF @ 25V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Dual Supply Voltage :
- 200V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Factory Lead Time :
- 12 Weeks
- Radiation Hardening :
- No
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 11A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 5.5 ns
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Width :
- 9.65mm
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 23 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Recovery Time :
- 251 ns
- Height :
- 5.084mm
- Avalanche Energy Rating (Eas) :
- 247 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- Power Dissipation-Max :
- 150W Tc
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- JESD-609 Code :
- e3
- Datasheets
- IRF640NSTRLPBF
N-Channel Tape & Reel (TR) 150m Ω @ 11A, 10V ±20V 1160pF @ 25V 67nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF640NSTRLPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 247 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1160pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.Peak drain current for this device is 72A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
IRF640NSTRLPBF Features
the avalanche energy rating (Eas) is 247 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 72A.
a threshold voltage of 4V
IRF640NSTRLPBF Applications
There are a lot of Infineon Technologies
IRF640NSTRLPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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