IRF640NLPBF

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Mfr.Part #
IRF640NLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 200V 18A TO262
Stock
974
In Stock :
974

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Length :
10.668mm
Voltage - Rated DC :
200V
Input Capacitance (Ciss) (Max) @ Vds :
1160pF @ 25V
Max Junction Temperature (Tj) :
175°C
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
18A
Number of Terminations :
3
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
72A
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Mount :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Fall Time (Typ) :
5.5 ns
Drain to Source Breakdown Voltage :
200V
Radiation Hardening :
No
Turn-Off Delay Time :
23 ns
Number of Elements :
1
Transistor Element Material :
SILICON
Lead Free :
Contains Lead, Lead Free
Nominal Vgs :
4 V
Rds On (Max) @ Id, Vgs :
150m Ω @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs :
67nC @ 10V
Rise Time :
19ns
Element Configuration :
Single
Resistance :
150mOhm
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
247 mJ
FET Type :
N-Channel
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Turn On Delay Time :
10 ns
Operating Temperature :
-55°C~175°C TJ
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
30
Series :
HEXFET®
Width :
4.826mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
18A Tc
REACH SVHC :
No SVHC
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
150W
Power Dissipation-Max :
150W Tc
Current Rating :
18A
ECCN Code :
EAR99
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Published :
2004
Factory Lead Time :
12 Weeks
Number of Channels :
1
Height :
15.01mm
Threshold Voltage :
4V
Packaging :
Tube
Datasheets
IRF640NLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF640NLPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Channels:1, IRF640NLPBF pinout, IRF640NLPBF datasheet PDF, IRF640NLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF640NLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF640NLPBF


N-Channel Tube 150m Ω @ 11A, 10V ±20V 1160pF @ 25V 67nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

IRF640NLPBF Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 247 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1160pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.Peak drain current for this device is 72A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

IRF640NLPBF Features


the avalanche energy rating (Eas) is 247 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 72A.
a threshold voltage of 4V


IRF640NLPBF Applications


There are a lot of Infineon Technologies
IRF640NLPBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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