IRF640NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1999

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

225

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.15Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Vgs (Max) :

±20V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

JESD-609 Code :

e0

Avalanche Energy Rating (Eas) :

247 mJ

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 25V

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

150m Ω @ 11A, 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

72A

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Power Dissipation-Max :

150W Tc

Drain to Source Voltage (Vdss) :

200V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

200V

Drain Current-Max (Abs) (ID) :

18A