IRF640LPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Drain to Source Resistance :

180mOhm

Max Operating Temperature :

150°C

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

14 ns

Power Dissipation :

130W

Input Capacitance :

1.3nF

FET Type :

N-Channel

Continuous Drain Current (ID) :

18A

Rds On (Max) @ Id, Vgs :

180mOhm @ 11A, 10V

Packaging :

Tube

Weight :

2.387001g

Power Dissipation-Max :

3.1W Ta 130W Tc

Mounting Type :

Through Hole

Length :

10.41mm

Number of Pins :

3

Fall Time (Typ) :

36 ns

Height :

9.65mm

Drain to Source Breakdown Voltage :

200V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

200V

Rise Time :

51ns

Number of Channels :

1

Vgs (Max) :

±20V

Width :

4.7mm

Turn-Off Delay Time :

45 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Number of Elements :

1

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Element Configuration :

Single

Supplier Device Package :

TO-262-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

180 mΩ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)