IRF640FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

Voltage - Rated DC :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

180m Ω @ 9A, 10V

Transistor Application :

SWITCHING

Rise Time :

27ns

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

18A Tc

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

18A

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

72A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

18A

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Mount :

Through Hole

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

MESH OVERLAY™

Power Dissipation-Max :

40W Tc

Base Part Number :

IRF6

Number of Pins :

3

Pin Count :

3

Fall Time (Typ) :

25 ns

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

ECCN Code :

EAR99

Package / Case :

TO-220-3 Full Pack

Element Configuration :

Single

Drain to Source Breakdown Voltage :

200V

Power Dissipation :

40W

Avalanche Energy Rating (Eas) :

280 mJ