IRF640

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

280 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

150°C TJ

Voltage - Rated DC :

200V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

72A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

125W

Mount :

Through Hole

Element Configuration :

Single

Base Part Number :

IRF6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

180m Ω @ 9A, 10V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

18A

Mounting Type :

Through Hole

Power Dissipation-Max :

125W Tc

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

18A

Series :

MESH OVERLAY™

Packaging :

Tube

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Fall Time (Typ) :

25 ns

Number of Pins :

3

Transistor Element Material :

SILICON

Rise Time :

27ns

Package / Case :

TO-220-3