IRF640,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

16A

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Pin Count :

3

ECCN Code :

EAR99

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

580 mJ

Current - Continuous Drain (Id) @ 25°C :

16A Tc

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

180m Ω @ 8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

200V

Surface Mount :

No

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation-Max :

136W Tc

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 25V

Reach Compliance Code :

Unknown

Series :

TrenchMOS™

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

64A

Vgs (Max) :

±20V

Published :

1999

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Drain-source On Resistance-Max :

0.18ohm