IRF634STRLPBF
- Mfr.Part #
- IRF634STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 250V
- Stock
- 24,173
- In Stock :
- 24,173
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID) :
- 8.1A
- Number of Elements :
- 1
- Max Power Dissipation :
- 3.1W
- Height :
- 4.83mm
- Weight :
- 1.437803g
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Published :
- 2004
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Channels :
- 1
- Radiation Hardening :
- No
- Drain to Source Resistance :
- 450mOhm
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 32A
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 42 ns
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 250V
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 21ns
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 19 ns
- Width :
- 9.02mm
- Terminal Finish :
- Matte Tin (Sn)
- Length :
- 10.67mm
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 9.6 ns
- Datasheets
- IRF634STRLPBF
Tape & Reel (TR) 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF634STRLPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.This device has a continuous drain current (ID) of [8.1A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.A maximum pulsed drain current of 32A is the maximum peak drain current rated for this device.MOSFETs have 450mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).
IRF634STRLPBF Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 8.1A
the turn-off delay time is 42 ns
based on its rated peak drain current 32A.
single MOSFETs transistor is 450mOhm
a 250V drain to source voltage (Vdss)
IRF634STRLPBF Applications
There are a lot of Vishay Siliconix
IRF634STRLPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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