IRF634S
- Mfr.Part #
- IRF634S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 8.1A D2PAK
- Stock
- 9,060
- In Stock :
- 9,060
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2016
- Mount :
- Surface Mount
- Width :
- 9.02mm
- Rise Time :
- 21ns
- Rds On Max :
- 450 mΩ
- Turn-Off Delay Time :
- 42 ns
- Weight :
- 1.437803g
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Drain to Source Resistance :
- 450mOhm
- Packaging :
- Tube
- Current Rating :
- 8.1A
- Turn On Delay Time :
- 9.6 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Contains Lead
- Supplier Device Package :
- D2PAK
- Fall Time (Typ) :
- 19 ns
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 450mOhm @ 5.1A, 10V
- Drain to Source Voltage (Vdss) :
- 250V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 3.1W Ta 74W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Voltage - Rated DC :
- 250V
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 25V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- Non-RoHS Compliant
- Length :
- 10.67mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 4.83mm
- Continuous Drain Current (ID) :
- 8.1A
- Input Capacitance :
- 770pF
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 8.1A Tc
- Datasheets
- IRF634S
N-Channel Tube 450mOhm @ 5.1A, 10V ±20V 770pF @ 25V 41nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF634S Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 770pF @ 25V.This device conducts a continuous drain current (ID) of 8.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 42 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 450mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF634S Features
a continuous drain current (ID) of 8.1A
the turn-off delay time is 42 ns
single MOSFETs transistor is 450mOhm
a 250V drain to source voltage (Vdss)
IRF634S Applications
There are a lot of Vishay Siliconix
IRF634S applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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