IRF634PBF
- Mfr.Part #
- IRF634PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 8.1A TO220AB
- Stock
- 12,149
- In Stock :
- 12,149
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 4V
- Published :
- 2011
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 770pF
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 250V
- Lead Free :
- Lead Free
- REACH SVHC :
- Unknown
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 74W Tc
- Radiation Hardening :
- No
- Length :
- 10.41mm
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 8 Weeks
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Rise Time :
- 21ns
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Drain to Source Resistance :
- 450mOhm
- Number of Pins :
- 3
- Width :
- 4.7mm
- Turn-Off Delay Time :
- 42 ns
- Height :
- 9.01mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 74W
- Weight :
- 6.000006g
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Packaging :
- Tube
- Nominal Vgs :
- 4 V
- Fall Time (Typ) :
- 19 ns
- Rds On Max :
- 450 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 9.6 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 770pF @ 25V
- Resistance :
- 450mOhm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 8.1A Tc
- Continuous Drain Current (ID) :
- 8.1A
- Rds On (Max) @ Id, Vgs :
- 450mOhm @ 5.1A, 10V
- Supplier Device Package :
- TO-220AB
- Datasheets
- IRF634PBF
N-Channel Tube 450mOhm @ 5.1A, 10V ±20V 770pF @ 25V 41nC @ 10V 250V TO-220-3
IRF634PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 770pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.1A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 450mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9.6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 250V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF634PBF Features
a continuous drain current (ID) of 8.1A
the turn-off delay time is 42 ns
single MOSFETs transistor is 450mOhm
a threshold voltage of 4V
a 250V drain to source voltage (Vdss)
IRF634PBF Applications
There are a lot of Vishay Siliconix
IRF634PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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