IRF634NPBF
- Mfr.Part #
- IRF634NPBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 8A TO220AB
- Stock
- 6,441
- In Stock :
- 6,441
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Length :
- 10.41mm
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 28 ns
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 250V
- Continuous Drain Current (ID) :
- 8A
- Package / Case :
- TO-220-3
- Drain to Source Resistance :
- 435mOhm
- Rds On Max :
- 435 mΩ
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Turn On Delay Time :
- 8.4 ns
- Weight :
- 6.000006g
- Power Dissipation-Max :
- 3.8W Ta 88W Tc
- Height :
- 9.01mm
- Input Capacitance :
- 620pF
- Max Operating Temperature :
- 175°C
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Width :
- 4.7mm
- Fall Time (Typ) :
- 15 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Rise Time :
- 16ns
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1
- Published :
- 2009
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 435mOhm @ 4.8A, 10V
- Min Operating Temperature :
- -55°C
- Supplier Device Package :
- TO-220AB
- Datasheets
- IRF634NPBF
N-Channel Tube 435mOhm @ 4.8A, 10V ±20V 620pF @ 25V 34nC @ 10V 250V TO-220-3
IRF634NPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 435mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF634NPBF Features
a continuous drain current (ID) of 8A
the turn-off delay time is 28 ns
single MOSFETs transistor is 435mOhm
a 250V drain to source voltage (Vdss)
IRF634NPBF Applications
There are a lot of Vishay Siliconix
IRF634NPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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