IRF634NPBF

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Mfr.Part #
IRF634NPBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 8A TO220AB
Stock
6,441
In Stock :
6,441

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Length :
10.41mm
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Turn-Off Delay Time :
28 ns
Mount :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Drain to Source Voltage (Vdss) :
250V
Continuous Drain Current (ID) :
8A
Package / Case :
TO-220-3
Drain to Source Resistance :
435mOhm
Rds On Max :
435 mΩ
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Turn On Delay Time :
8.4 ns
Weight :
6.000006g
Power Dissipation-Max :
3.8W Ta 88W Tc
Height :
9.01mm
Input Capacitance :
620pF
Max Operating Temperature :
175°C
Vgs (Max) :
±20V
Element Configuration :
Single
Width :
4.7mm
Fall Time (Typ) :
15 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
8A Tc
Rise Time :
16ns
Number of Pins :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Channels :
1
Published :
2009
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
FET Type :
N-Channel
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
435mOhm @ 4.8A, 10V
Min Operating Temperature :
-55°C
Supplier Device Package :
TO-220AB
Datasheets
IRF634NPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF634NPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-220-3, Number of Pins:3, Number of Channels:1, Mounting Type:Through Hole, IRF634NPBF pinout, IRF634NPBF datasheet PDF, IRF634NPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF634NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF634NPBF


N-Channel Tube 435mOhm @ 4.8A, 10V ±20V 620pF @ 25V 34nC @ 10V 250V TO-220-3

IRF634NPBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 620pF @ 25V.This device conducts a continuous drain current (ID) of 8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 435mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF634NPBF Features


a continuous drain current (ID) of 8A
the turn-off delay time is 28 ns
single MOSFETs transistor is 435mOhm
a 250V drain to source voltage (Vdss)


IRF634NPBF Applications


There are a lot of Vishay Siliconix
IRF634NPBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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