IRF634B-FP001

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

200 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Rise Time :

75ns

Turn-Off Delay Time :

100 ns

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.05A, 10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

74W

Weight :

1.8g

Element Configuration :

Single

Vgs (Max) :

±30V

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

65 ns

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

FET Type :

N-Channel

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Continuous Drain Current (ID) :

8.1A

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

250V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 weeks ago)

Pulsed Drain Current-Max (IDM) :

32.4A

Radiation Hardening :

No

Mount :

Through Hole

Power Dissipation-Max :

74W Tc